By E. J. M. Kendall (Auth.)
ISBN-10: 0080065112
ISBN-13: 9780080065113
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Extra resources for Transistors
Sample text
CHAPTER 2 Point Contact Devices AMPLIFICATION using semiconductors was first achieved using the negative temperature coefficient of resistance of certain materials. As the current through the material increases heating takes place, and the resistance begins to d r o p . If the current, and hence the heating, is sufficiently high the resultant decrease in resistance will actually cause a decrease in the voltage across the material, and consequently a negative differential resistance occurs. This characteristic may be used to construct networks with a net gain, provided the frequencies are low enough for the temperature to follow the current changes.
JUNCTION DEVICES A N D DEVELOPMENTS 51 It is possible to consider a junction transistor as two p-n j u n c tions sufficiently close to each other in the parent crystal to allow mutual interaction. A s in the point contact transistor, the emitter circuit is forward biased, and the collector circuit is reverse biased; lb Collector space charge Ie FIG. 2. An n-p-n transistor and its band diagram (all currents leading into the device are considered positive). but the similarity ends there, since in the p-n junction the rectification takes place in the bulk of the material and not at the contacts.
T o date silicon transistors with f Transistors by E. J. M. Kendall (Auth.)
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