By Gordon Roberts, Adel Sedra
ISBN-10: 0195108426
ISBN-13: 9780195108422
SPICE (Simulation software with built-in Circuit Emphasis) has develop into the usual for computer-aided circuit research for microelectronic circuits, and is utilized by nearly all of IC designers in North the United States this present day. in contrast to such a lot SPICE books, which easily current SPICE in a how-to-use type, this quantity outlines how SPICE is utilized in the method of layout itself. It beneficial properties methodologies for examining transistor and op amp circuits, over a hundred SPICE examples, and various bankruptcy difficulties. meant to accompany Sedra & Smith's Microelectronic Circuits, 4/e, this e-book may also stand by myself as a handbook for computer-aided circuit research for microelectronic circuits. SPICE decks and the examples during this booklet, in addition to examples from the 1st version, are all on hand online through the area broad internet at http://www.macs.ece.mcgill.ca/~roberts/ROBERTS/SPICE/. such a lot circuit examples should be simulated utilizing a pupil model of PSpice operating on a low-budget workstation. This new moment variation improves upon the 1st by means of tightening up the language and shortening the volume's size by way of virtually fifty percentage which will make the fabrics extra helpful as a complement to Microelectronic Circuits 3/e, by means of Sedra and Smith. additionally to be had from Oxford collage Press to accompany Sedra/Smith Microelectronic Circuits 3/E: Laboratory handbook by means of K.C. Smith (University of Toronto) ISBN 0-19-511103-6 extra issues of options through okay. C. Smith ISBN 0-19-510586-9 1995 difficulties complement by means of K.C. Smith ISBN 0-19-510367-X
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Sample text
Compared to use of the hybrid-it model, and thus it is useful for hand analysis. 56 Chapter 1 • Integrated-Circuit Devices and Modelling rb V b o-~'\Iv--' Fig. 34 v, A low-frequency, small-signal T model for an active BJT. 5 DEVICE MODEL SUMMARY As a useful aid, all of the equations for the large-signal and small-signal modelling of diodes, MOS transistors, and bipolar transistors, along with values for the various constants, are listed in the next few pages. 5 Device Model Summary 57 Forward-Biased Diode o, D Is = Aoqn ,( i -- + -LnN A LpN o p) I 10 = se VD/V T VT kT = - q - 26 mY at 300 OK Small-Signal Model of Forward-Biased Diode VT C T = Cd+C j rd = 10 10 Cd = ' T - Cj = - 2C ,o VT L'n Dn 'T = - MOS Transistor Equations The following equations are for n-channel devices-for p-channel devices, put negative signs in front of all voltages.
9 V). It should be noted that the cross-sectional area of the collector-base junction, Ac, is typically much larger than the effective area of the base-emitter junction, AE , which is shown in Fig. 25. This size differential results in Ac C jCO being larger than AE Cjeo, the base-emitter junction capacitance at 0 V bias, despite the lower doping levels. Finally, another large capacitor is C es' the capacitance of the collector-tosubstrate junction. Since this area is quite large, CCS' which is the depletion capacitance that results from this area, will be much larger than either C eb or the depletion capacitance component of C be, that is, Cj .
P-Channel Transistars All of the preceding equations have been presented for n-channel enhancement transistors. In the case of p-channel transistors, these equations can also be used if a negative sign is placed in front of every voltage variable. Thus, VGS becomes VSG' VOS becomes Vs o, V'n becomes -V,p, and so on. The condition required for conduction is now V SG > Vip. where Vtp is now a negative quantity for an enhancement p-channel transistor. 11 The requirement on the source-drain voltage for a p-channel transistor to be in the active region is Vso> VSG + V,p' The equations for ro, in both regions, remain unchanged, because all voltage variables are squared, resulting in positive hole current flow from the source to the drain in p-channel transistors.
SPICE by Gordon Roberts, Adel Sedra
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