Read e-book online Steve Beam's semi-automatic card tricks PDF

By Steve Beam

Nine in x eleven 0.5 in hardcover ebook. 264 pages. characteristic card tips corresponding to: cellphone methods, Prediction results, shock occasion, Shrink-Wrapped Magic - The Magic of Marty Kane, natural Math, Stirring the Stew, Singularities, very unlikely destinations, playing tips, Card methods with out cards, Magic Squares, Updates, The field Magician, and strikes & innovations.

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Restoration activated by the transfer of charge into the read-out register via an internal connection to the last image section clock phase. It may be noted that the connections to the circuit are identical to those of a (OUTPUT CIRCUIT NOISE I single stage type, the only difference 16 II being a standing ~ I. n~ hl~ • I 14 current «1 mA) [ reque cy +:1width at wi el' r p e-spn pin now flowing in the en 12 , E I "substrate en 10 c connection. There I I o / is no light emission t 8 / W // to cause generation 6 of spurious charge.

1 •• •• standardize the thickness -I'. -551 - 7 .... ' of each package and to - lil4 make the base of the ,. package parallel with the - , • • 45 - •. 45 surface of the CCD. UNPACKAGEO CCO Invar has the best e... u ttl silicon expansion of -t: : Ut coefficient with :nl -ill. temperature IS such that the match is only perfect at -70°C with the result that the assembly bends in one direction as the CCO IN PACKAGE temperature is reduced to Figure 10 70°C and begins to relax back below -70°C. A good fit has been obtained between measurements and a simple model and the model has allowed us to predict the effect of altering the Invar thickness (Fig 12).

The latter offers an interesting capability of performing tip-tilt correction electronically, and results of field tests with this device are described in another paper in these proceedings [3]. All of the devices described here are fabricated at the Microelectronics Laboratory at Lincoln Laboratory and features 750 m2 of class 10 and 900 m2 of class 100 clean-room space. A significant recent development in this facility was the conversion from 100-mm to 150-mm wafers in October 1996. This conversion included the acquisition of a new full-wafer scanner with l-Ilm resolution specifically for largearea CCDs on the larger wafers.

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