New PDF release: Introduction to CMOS OP-AMPs and Comparators

By Roubik Gregorian

ISBN-10: 0471317780

ISBN-13: 9780471317784

ISBN-10: 058530100X

ISBN-13: 9780585301006

A step by step advisor to the layout and research of CMOS operational amplifiers and comparators

This quantity is a accomplished textual content that provides a close remedy of the research and layout ideas of 2 of an important elements of analog steel oxide semiconductor (MOS) circuits, particularly operational amplifiers (op-amps) and comparators. The booklet covers the actual operation of those parts, their layout tactics, and functions to analog MOS circuits-particularly these related to switched-capacitor circuits, and analog-to-digital (A/D) and digital-to-analog (D/A) converters. Roubik Gregorian, a number one authority within the box, supplies circuit designers the technical wisdom they should layout high-performance op-amps and comparators compatible for many analog circuit functions. during this self-contained remedy, that's loosely in keeping with his well-received 1986 e-book, Analog MOS built-in Circuits for sign Processing (coauthored with Gabor C. Temes), Gregorian studies the necessary fundamentals sooner than advancing to cutting-edge subject matters and problem-solving innovations. This precious guide:
* truly explains configuration and function problem concerns affecting the operation of CMOS op-amps and comparators
* information complex layout methods to enhance performance
* offers sensible layout examples compatible for a wide variety of analog circuit applications
* contains enormous quantities of illustrations into the text
* Concludes every one bankruptcy with difficulties and references to complicated themes, worthy in textbook adoptions

advent to CMOS Op-Amps and Comparators is necessary for analog and mixed-signal designers, for senior and graduate scholars in electric engineering, and for a person who wish to stay alongside of this crucial expertise.

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Extra resources for Introduction to CMOS OP-AMPs and Comparators

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2.  On the other hand, the formulas derived were valid for large as well as small voltage and current variations.  This simplifies the equations and permits the use of linear models (simple linear equivalent circuits) for these nonlinear devices.  Here we used we can write Here ( iD/ v GS)0 and so on denote the partial derivatives evaluated at the bias point. 14 Low­frequency equivalent circuit of a MOSFET.  It is a thin­oxide capacitance, and hence to a good approximation can be regarded as being voltage independent.

We assumed that ID is independent of VDS). 4a. 4 (a) VBE­based supply­independent bias circuit; (b) vertical pnp bipolar transistor in an n­well CMOS process.  For the bipolar transistor, the collector current is given by where VBE is the base–emitter voltage, VT = kT/q, and Is is a constant current, which is proportional to the cross­sectional area of the emitter, which is used to describe the transfer characteristic of the transistor in the forward active region. 6), we have This equation can be solved iteratively for Ibias.

Usually, VT is given as the v G value needed for iD = 1 µA; it may range from a fraction of a volt to several volts.  Some electrons are also drawn from the drain; however, since v D > 0, the drain–substrate junction is more reverse biased, and hence it is harder for electrons to escape from the drain. 8 Pinch­off in an MOS transistor.  Thus the transistor acts as a resistor, with resistance R = [µnCox W/L(v G – VT)]–1 controlled by v G.  This range is called the linear region (or triode region) of operation of the MOS transistor.

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Introduction to CMOS OP-AMPs and Comparators by Roubik Gregorian


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