By I. Ohdomari, M. Oshima, A. Hiraki
ISBN-10: 0444818898
ISBN-13: 9780444818898
Those complaints comprise a variety of papers provided at a symposium on semiconductor interfaces. themes coated contain metal/silicon, semiconductor hetero-interface, characterization, semiconducting new fabrics, keep watch over of interface houses and phone metallization
Read Online or Download Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993 PDF
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Extra info for Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993
Sample text
9. R. P. Elliott. Constitution of Binary Alloys, = 3 . 8 3 e V for S i ( 1 1 1 ) 1 x 1 - H [31] a n d Φ η ι = 3 . 9 e V for Pb M c G r a w Hill. N e w York. 1 9 6 5 ) 1st supl. T h e phase diagram d o e s not show t h e p r e s e n c e of any chemical compound and the mutual [32], w e find Φ b n = 0 . 1 2 e V , a value in very solubilities a r e negligibly s m a l l a t t h e P b good melting point. agreement with the present measurements. In conclusion, evaporated in-situ 10. D. R. Heslinga. H .
Pietsch, U. Köhler and M. Henzler, J. Appl. Phys. 73 (1993) 4797 . M. Goodman, J. Appl. Phys. 34 (1963) 329. H. H. Williams, MetalSemiconductor Contacts (Clarendon, Oxford, 1988), 2nd ed.. H. P. J. R. Graham and R T . Tung, Appl. Surf. , 70/71 (1993)422. M. Sze, Physics oj Semiconductor devices, (Wiley, New York 1981), 2nd ed.. P. M. Sze, Bell. Syst. Technol. J. 47 (1968) 195. [12] W. Schottky, Naturwissenschaften , 26 (1938) 843. [13] W. Mönch, in Festkörperprobleme (Adv. Solid State Physics) Vol.
P. Elliott. Constitution of Binary Alloys, = 3 . 8 3 e V for S i ( 1 1 1 ) 1 x 1 - H [31] a n d Φ η ι = 3 . 9 e V for Pb M c G r a w Hill. N e w York. 1 9 6 5 ) 1st supl. T h e phase diagram d o e s not show t h e p r e s e n c e of any chemical compound and the mutual [32], w e find Φ b n = 0 . 1 2 e V , a value in very solubilities a r e negligibly s m a l l a t t h e P b good melting point. agreement with the present measurements. In conclusion, evaporated in-situ 10. D. R. Heslinga. H . H .
Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993 by I. Ohdomari, M. Oshima, A. Hiraki
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