Download e-book for iPad: Thin-Film Transistors by Cherie R. Kagan, Paul Andry

By Cherie R. Kagan, Paul Andry

ISBN-10: 0824709594

ISBN-13: 9780824709594

Assesses the improvement, houses, processing, patterning, and equipment characterization of skinny movie transistors in accordance with amorphous polycrystalline silicon. Tackles the demanding situations linked to designing high-resolution, large-area screens.

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Kawai et al. 19 Schematic cross section of an inverted-staggered Te TFT. (From Ref. ) TM Copyright n 2003 by Marcel Dekker, Inc. All Rights Reserved. 20 Transfer characteristics of Te TFTs, showing insensitivity to illumination. (From Ref. ) of low content. Their TFTs were not quite as good in ON/OFF ratio, but they included a light shield (see Fig. 22), since a-Si has considerable photoconductivity and the display application involves bright backlighting. In 1983 the Fujitsu group described a new self-aligned a-Si structure [38], using the approach introduced by Lueder’s group for CdSe.

Haering, “Behavior of CdS Thin-Film Transistors,” Solid State Electron. 7, 39 (1964). 16. H. Koelmans and H. C. DeGraaff, “Drift Phenomena in CdSe Thin-Film FETs,” Solid State Electron. 10, 997 (1967). 17. S. R. Hofstein and F. P. Heiman, “The Silicon Insulated-Gate Field-Effect Transistor,” Proc. IEEE 51, 1190 (1963). 18. B. J. Lechner, F. J. Marlowe, E. O. Nester, and J. Tults, “Liquid Crystal Matrix Displays,” Proc. IEEE 59, 1566 (1971). 19. T. P. Brody, J. A. Asars, and G. D. Dixon, “A 6Љ ‫ ן‬6Љ 20 Lines-per-Inch Liquid Crystal Display Panel,” Digest 1973 SID Intl.

From Ref. ) TM Copyright n 2003 by Marcel Dekker, Inc. All Rights Reserved. 24 Schematic cross section of an inverted-staggered back-channel cut a-Si TFT. (From Ref. 25 Transfer characteristics of a double-gate low-leakage poly-Si TFT. (From Ref. ) TM Copyright n 2003 by Marcel Dekker, Inc. All Rights Reserved. 26 Schematic cross section (a) and layout (b) of a double-gate lowleakage poly-Si TFT. (From Ref. ) same plasma-enhanced chemical vapor deposition (PECVD) technique used to deposit the active layer (see Fig.

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