By Jean-Pierre Colinge (auth.)
ISBN-10: 1441991069
ISBN-13: 9781441991065
ISBN-10: 1461347955
ISBN-13: 9781461347958
Silicon-on-Insulator expertise: fabrics to VLSI, 3rd Edition, retraces the evolution of SOI fabrics, units and circuits over a interval of approximately two decades. 20 years of development, study and improvement within which SOI fabric fabrication concepts were born and deserted, units were invented and forgotten, yet, most significantly, 20 years within which SOI know-how has bit by bit confirmed it may possibly outperform bulk silicon in each real way. The flip of the century grew to become out to be a milestone for the semiconductor undefined, as fine quality SOI wafers all of sudden turned to be had in huge amounts. From then on, it took just a couple of years to witness using SOI know-how in a wealth of purposes starting from audio amplifiers and wristwatches to 64-bit microprocessors.
This ebook offers a whole and cutting-edge evaluation of SOI fabrics, units and circuits. SOI fabrication and characterization options, SOI CMOS processing, and the physics of the SOI MOSFET obtain an in-depth analysis.
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Extra info for Silicon-on-Insulator Technology: Materials to VLSI
Example text
Silicon "Hl : Silicon r: " A I Silicon B Silicon . [113] Figure 2-17 shows TEM cross sections of 80 and 150 nm-thick buried oxides produced by low-dose implantation. The choice of the implantation energy is a critical parameter. At 190 keY, which is close to the standard SIMOX energy, some Si02 islands are found in the silicon overlayer. Indeed, when the peak of implant defect generation and the projected range of the oxygen ions are distinct, two precipitation sites can occur and oxide precipitates can form at both the oxygen projected range and the defect projected range.
This layer provides a template or guide upon which the oxide forms during subsequent annealing. Buried oxides prepared in this way are shown to be continuous and without silicon inclusions . [IZO] It is worth noting that additional implant of oxygen after the formation of can be used to improve the stoichiometry of the oxide and improve its electrical properties . It has 35 2. SOl Materials been shown that the additional implantation of oxygen doses ranging between 1015 and 1017 em" in the BOX of an already formed SIMOX structure (either "standard" or low-dose) increases the density of the oxide and reduces the trapping of charges in the oxide when the material is exposed to ionizing radiations.
131] This bulk conduction is quasi ohmic and time dependent up to an applied voltage of 80 V for a 400 nm-thick BOX. 3 eV and can be associated with trapping defects. At higher applied voltages the current-voltage characteristics are superlinear and resemble those observed for deposited Si02 films that contain excess silicon in the form of Si clusters. The high-field conduction depends very little on temperature, indicating that the conduction is controlled by tunneling between silicon clusters or 03Si-Si03 bonds (E' centers).
Silicon-on-Insulator Technology: Materials to VLSI by Jean-Pierre Colinge (auth.)
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