Ahmet Bindal, Sotoudeh Hamedi-Hagh's Silicon Nanowire Transistors PDF

By Ahmet Bindal, Sotoudeh Hamedi-Hagh

ISBN-10: 331927175X

ISBN-13: 9783319271750

ISBN-10: 3319271776

ISBN-13: 9783319271774

This e-book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with unmarried and dual-work capabilities, emphasizing low static and dynamic energy intake. The authors describe a method stream for fabrication and generate SPICE types for development numerous electronic and analog circuits. those comprise an SRAM, a baseband unfold spectrum transmitter, a neuron cellphone and a box Programmable Gate Array (FPGA) platform within the electronic area, in addition to excessive bandwidth single-stage and operational amplifiers, RF verbal exchange circuits within the analog area, as a way to express this technology’s actual capability for the subsequent new release VLSI.

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9 as a function of frequency, f, when a 10 aF capacitive load is connected to each logic gate’s output. Worst-case power dissipation is obtained by considering all the possible input combinations to a logic gate, measuring the average value of the power supply current within one clock period (activity factor ¼ 1 %) for each combination, and finally selecting the combination that yields the maximum average current. Each current waveform is averaged within one clock period during charging and discharging cycle of the output capacitance.

3 Device Structure As with the dual work function SNTs, this study also considers both NMOS and PMOS transistors enhancement type with undoped silicon bodies constructed perpendicular to the substrate. Both transistors have the same body radius and effective channel length. Source/drain (S/D) contacts are assumed highly doped to obtain ohmic contacts. 5 nm thick gate oxide. Device simulations are performed using Silvaco’s 3-D ATLAS device simulation environment with a 1 V power supply voltage. The device radius is changed from 1 nm to 25 nm while its effective channel length is varied between 5 nm and 250 nm.

5 Full Adder Comparison In order to acknowledge the significance of this technology with respect to the earlier and emerging technologies, a 28-transistor CMOS full adder circuit is examined in terms of transient performance, power dissipation, and layout area in various technology nodes. 3, which shows the full adder in this study excels in all three categories [20–26]. 3 Summary Three-dimensional undoped NMOS and PMOS SNTs with a single-work-function metal gate were designed to minimize the leakage current under 1 pA and maximize the DC transconductance as a function of device radius and effective channel length.

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Silicon Nanowire Transistors by Ahmet Bindal, Sotoudeh Hamedi-Hagh


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