By John D. Cressler
ISBN-10: 1420066854
ISBN-13: 9781420066852
ISBN-10: 1420066862
ISBN-13: 9781420066869
What turns out regimen at the present time was once now not regularly so. the sector of Si-based heterostructures rests solidly at the shoulders of fabrics scientists and crystal growers, these purveyors of the semiconductor “black arts” linked to the deposition of pristine motion pictures of nanoscale dimensionality onto huge, immense Si wafers with close to limitless precision. we will now develop near-defect loose, nanoscale motion pictures of Si and SiGe strained-layer epitaxy suitable with traditional high-volume silicon built-in circuit production. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure units tells the fabrics aspect of the tale and info the various advances within the Si-SiGe strained-layer epitaxy for gadget functions. Drawn from the great and well-reviewed Silicon Heterostructure instruction manual, this quantity defines and information the numerous advances within the Si/SiGe strained-layer epitaxy for gadget purposes. Mining the skills of a world panel of specialists, the publication covers sleek SiGe epitaxial development options, epi defects and dopant diffusion in skinny movies, balance constraints, and digital houses of SiGe, strained Si, and Si-C alloys. It comprises appendices on subject matters similar to the houses of Si and Ge, the generalized Moll-Ross relatives, quintessential charge-control family, and pattern SiGe HBT compact version parameters.
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Technical Digest IEEE International Electron Devices Meeting, Washington, 1990, pp. 17–20. 42. DL Harame, EF Crabbe´, JD Cressler, JH Comfort, JY-C Sun, SR Stiffler, E Kobeda, JN Burghartz, MM Gilbert, J Malinowski, and AJ Dally. A high-performance epitaxial SiGe-base ECL BiCMOS technology. Technical Digest IEEE International Electron Devices Meeting, Washington, 1992, pp. 19–22. 43. DL Harame, JMC Stork, BS Meyerson, KY-J Hsu, J Cotte, KA Jenkins, JD Cressler, P Restle, EF Crabbe´, S Subbanna, TE Tice, BW Scharf, and JA Yasaitis.
5 Introduction......................................................................... 4-1 Heteroepitaxy of SiGe and SiGe:C on Si........................... 4-1 Characterization of Strained SiGe and Si Layers ............................................................................... 4-4 Growth of Strained SiGe on Si .......................................... 4-7 Summary ............................................................................ 4-10 Introduction By adding Ge to Si new properties of the material can be created, which offer applications in a wide range of electronic devices.
Cooperative phenomena is silicon/germanium low temperature epitaxy. Applied Physics Letters 53:2555–2557, 1988. 17. CA King, JL Hoyt, CM Gronet, JF Gibbons, MP Scott, and J Turner. Si/Si1Àx/Gex heterojunction bipolar transistors produced by limited reaction processing. IEEE Electron Device Letters 10:52–54, 1989. 18. TO Sedgwick, M Berkenbilt, and TS Kuan. Low-temperature selective epitaxial growth of silicon at atmospheric pressure. Applied Physics Letters 54:2689–2691, 1989. 19. PJ Wang, FF Fang, BS Meyerson, J Mocera, and B Parker.
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler
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