New PDF release: Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the

By P. Sigmund (auth.), Professor Dr. A. Benninghoven, Professor Dr. J. Okano, Professor Dr. R. Shimizu, Dr. H. W. Werner (eds.)

ISBN-10: 3642822568

ISBN-13: 9783642822568

ISBN-10: 3642822584

ISBN-13: 9783642822582

This quantity comprises complete court cases of the Fourth foreign convention on Secondary Ion Mass Spectrometry (SIMS-IV), held within the Minoo-Kanko inn, Osaka, Japan, from November thirteenth to nineteenth, 1983. Coordinated by means of an area or­ ganizing committee lower than the auspices of the foreign organizing com­ mittee, it prior meetings held in MUnster (1977), Stanford (1979), and Budapest (1981). The convention used to be attended by means of approximately 250 members from 18 international locations, and one hundred thirty papers together with 24 invited ones have been offered. Reflecting the rap­ idly increasing actions within the SIMS box, informative papers have been pre­ sented containing updated info on SIMS and diverse similar fields. The lawsuits focussed upon six major concerns: (1) basics of sput­ tering and secondary ion formation. (2) fresh development in instrumentation, together with submicron SIMS and photo processing. (3) SIMS mixed with different floor research thoughts. (4) extraordinary SIMS-related analytical equipment comparable to laser-microprobe SIMS, sputtered impartial mass spectrometry, mass spectrometry of sputtered neutrals through multi-photon resonance ionization, and accelerator-based SIMS. (5) natural SIMS and FAB which has lately develop into a swiftly increasing process in pharmacy, biotechnology, and so forth. (6) Appl ica­ tions of SIMS to varied fields equivalent to metallurgy, geology, and biology, together with intensity profiling of semiconductors, and research of inorganic mate­ rials. As a venue for the trade of principles and knowledge bearing on all of the above matters, the convention proved a good success.

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Additional resources for Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the Fourth International Conference, Osaka, Japan, November 13–19, 1983

Sample text

6 •. 5. This value was obtained by Betz for the thin film alloy [8J. The sample temperature is 153 K and ion current density is 40 ~A/cm2. After 150 second, we obtain the nearly steady state. The composition at the top-most layer is about 73% of Au. The compositional value at the dip is also very similar to the experimental value. 5 for Au:Cu is also calculated. These calculation results are different from the experimental results [6J. We might conclude that the sputtering yield ratio for the Au-Cu alloy is nearly 1:1 for Au:Cu.

The future pits are visible in the target surface before cooling is initiated, see Fig. 2. The vertical position of each atom is indicated by a ~ scale. 0 keV pits formed using Shulga's Moliere potential [9]; all three events exceed the tentative threshold for the onset of non-linear events as defined by Sigmund and Claussen [19] a nd Thompson [20]; other similar pits are created in the same data set 27 near the original surface layer are white. Dark grey atoms are further from that plane than light grey atoms.

Sputtering of the specimen B for 3min resulted in the deposition of the film B 100-200 ~ thick onto the substrate A. The primary beam was then interrupted with the shutter and the target returned to its initial place. On the shutter removal A+ or B+ ion current was recorded as a function of the sputtering time.

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Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the Fourth International Conference, Osaka, Japan, November 13–19, 1983 by P. Sigmund (auth.), Professor Dr. A. Benninghoven, Professor Dr. J. Okano, Professor Dr. R. Shimizu, Dr. H. W. Werner (eds.)


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