By Ali M. Niknejad
ISBN-10: 0792379861
ISBN-13: 9780792379867
Instant RF and microwave ICs rely significantly on passive units, comparable to inductors, capacitors, and transformers. Passive units permit the optimization of key RF circuit construction blocks by way of minimizing noise, maximizing achieve and frequency of operation, and minimizing energy. the mixing of passive units at the Si IC substrate calls for a serious knowing of substrate coupling and loss, together with electrically triggered conductive and displacement present flowing within the substrate in addition to magnetically triggered eddy currents. layout, Simulation and functions of Inductors and Transformers for Si RF ICs presents a deep knowing of the physics concerned about the operation of those units at microwave frequencies. also, the e-book tackles severe blocks that rely severely at the passive units, the voltage-controlled oscillator and a allotted amplifier. layout, Simulation and purposes of Inductors and Transformers for Si RF ICs might be of curiosity to RF and microwave built-in circuit engineers, desktop aided designers, equipment physicists, and electromagnetic researchers, in addition to strength electronics engineers.
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Extra resources for Design Simulation and Applications of Inductors and Transformers for Si RF ICs
Example text
This current couples to other large passive structures in a similar manner. Active devices also inject current into the substrate, directly and capacitively. Since most active devices are isolated from the substrate by either reverse-biased 36 INDUCTORS AND TRANSFORMERS FOR SI RF ICS pn junctions or oxide, capacitive substrate current injection and reception occur at high frequencies. Direct current can also be injected into the substrate due to hot electron effects. In a short-channel MOS transistor, for instance, electronhole pair creation takes place in the high-field pinch-off region near the drain due to collisions.
This work also improves upon earlier techniques developed in [Niknejad, 1997] to include such eddy-current induced losses. This will be discussed in Chapter 6. Even though some of the EM approaches discussed above automatically take eddy currents into account, these techniques are much slower than the techniques presented in this research. As a comparison, simulations with SONNET [Rautio, 1999], a commercially available tool, can run into hours for complicated geometries whereas they take seconds or sub-seconds utilizing the techniques of this book.
Hence, the conductivity of such layers plays an integral part in determining the Q factor of such devices, especially at lower frequencies. For instance, a capacitor is constructed by placing two metal conductors in close proximity. Reactive energy is stored in the electric field formed by the charges on such conductors. Since the metal layers are not infinitely conductive, energy is lost to heat in the volume of the conductors. This loss can be represented by a resistor placed in series with the capacitor.
Design Simulation and Applications of Inductors and Transformers for Si RF ICs by Ali M. Niknejad
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