By Kunal Korgaonkar, Prabhat Jain, Deepak Tomar (auth.), Olivier Temam, Pen-Chung Yew, Binyu Zang (eds.)
This booklet constitutes the refereed lawsuits of the ninth overseas Symposium on complex Parallel Processing applied sciences, APPT 2011, held in Shanghai, China, in September 2011.
The thirteen revised complete papers offered have been conscientiously reviewed and chosen from forty submissions.
The papers are equipped in topical sections on parallel disbursed approach architectures, structure, parallel software and software program, allotted and cloud computing.
Read Online or Download Advanced Parallel Processing Technologies: 9th International Symposium, APPT 2011, Shanghai, China, September 26-27, 2011. Proceedings PDF
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Additional info for Advanced Parallel Processing Technologies: 9th International Symposium, APPT 2011, Shanghai, China, September 26-27, 2011. Proceedings
These results reﬂect the eﬃciency of reﬁning the BIP policy. Table 3. Baseline System Parameters Component Parameter Processing core Instruction latency (without miss) L1 I-cache L1 D-cache L2 cache L3 (LLC) cache (single core) L3 (LLC) cache (Quad core) Memory access latency Cache line 4-wide pipeline out-of-order 1 cycle 32KB/4-way/LRU/1 cycle 32KB/8-way/LRU/1 cycle 256KB/8-way/LRU/10 cycles 1MB/16-way /30 cycles 4MB/16-way/30 cycles 200 cycles 64B Table 4. xalancbmk EDIP Performance for Shared Caches We use three metrics for measuring the performance of multiple concurrently running applications: throughput, weighted speed up and fairness.
9. Comparison of TAEDIP for Harmonic Mean Fairness and TAEDIP-G for the fairness metric. All schemes except LRU provides more than 1 fairness for Mix-2. 928. 4 Hardware Overhead Here we gives a summary of the overhead of diﬀerent insertion policies. The LRU/LIP policy does not require any SDMs. The brute force approach  is impractical for large number of cores (N). TADIP need N SDMs. Both TAEDIPI and TAEDIP-G need to record the current BIP level of each application, and require 2N SDMs, 2 for each of the N applications.
The PCM cell consists of a standard NMOS access transistor and phase change material, GST (Ge2 Sb2 Te5 ), as shown in Fig. 1. The phase change material is between a top and a bottom electrode with a heating element. When current is injected into the heating element, the phase change is induced. The phase change material can be switched between two states, amorphous and crystalline. The cell can be addressed using a selection transistor shown in Fig. 1(b). The read and write operations for a PCM cell are described as follows: Top Electrode BL GST Active Region Heater WL Bottom Electrode (a) (b) Fig.
Advanced Parallel Processing Technologies: 9th International Symposium, APPT 2011, Shanghai, China, September 26-27, 2011. Proceedings by Kunal Korgaonkar, Prabhat Jain, Deepak Tomar (auth.), Olivier Temam, Pen-Chung Yew, Binyu Zang (eds.)